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  Datasheet File OCR Text:
 SMD Type
Transistors IC
PNP Epitaxial Planar Silicon Transistors 2SA1331
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Unit: mm
Features
+0.1 2.4-0.1
Fast switching speed. High breakdown voltage.
+0.1 1.3-0.1
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
0.55
0.4
3
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base 2.Emitter 3.collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Base current Collector dissipation Jumction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating -60 -50 -5 -150 -400 -40 150 125 -55 to +125 Unit V V V mA mA mA mW
+0.1 0.38-0.1
0-0.1
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1
SMD Type
2SA1331
Electrical Characteristics Ta = 25
Parameter Collector cutoff current Emitter cutoff current DC current Gain Gain bandwidth product Common base output capacitance Collector-to-emitter saturation voltage Base-to-emitter saturation voltage Collector-to-base breakdown voltage Collector-to-emitter breakdown voltage Emitter-to-base breakdown voltage Delay time Rise time Storage time Fall time tf Symbol IcBO IEBO hFE fT Cob Testconditons VCB = -40V , IE = 0 VEB = -4V , IC = 0 VCE = -6V , IC = -1mA VCE = -6V , IC = -1mA VCB = -6V , f = 1MHz
Transistors IC
Min
Typ
Max -0.1 -0.1
Unit iA iA
90 100 3.5 -0.1 -0.75 -60 -50 -5 40 120 190 200
400 MHz pF -0.4 -1.1 V V V V V ns ns ns ns
VCE(sat) IC = -10mA , IB =-1mA VBE(sat) IC = -10mA , IB =-1mA V(BR)CBO IC = -10iA , IE = 0 V(BR)CEO IC = -1mA , RBE = V(BR)EBO IE = -10iA , IC = 0 td tr tstg
hFE Classification
Marking Rank hFE 90 4 180 O 5 135 270 6 200 400
2
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